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NP110N04PUJ
500
400
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
100
FORWARD TRANSFER CHARACTERISTICS
300
200
10
1
0.1
T A = ? 55 ° C
25 ° C
85°C
150°C
175°C
100
V GS = 10 V
0.01
V DS = 10 V
0
Pulsed
0.001
Pulsed
0
0.2
0.4
0.6
0.8
1
2
3
4
5
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
1000
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2
1
100
10
T A = ? 55 ° C
25 ° C
85°C
150°C
175°C
0
V DS = V GS
I D = 250 μ A
1
V DS = 5 V
Pulsed
-100
-50
0
50
100
150
200
1
10
100
1000
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
V GS = 10 V
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
I D = 55 A
4
3
2
1
0
Pulsed
4
3
2
1
0
Pulsed
1
10
100
1000
0
5
10
15
20
25
4
I D - Drain Current - A
Data Sheet D19730EJ1V0DS
V GS - Gate to Source Voltage - V
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相关代理商/技术参数
NP110N04PUJ-E2B-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP110N04PUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP110N04PUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 110A TO-263
NP110N055PUG-E1 制造商:Renesas Electronics Corporation 功能描述:
NP110N055PUG-E1-A 制造商:Renesas Electronics Corporation 功能描述:
NP110N055PUG-E1-AY 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) TO-263 T/R 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 55V, TO263ZP - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 55V 110A TO-263 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,55V/110A,Tch175
NP110N055PUG-E1-AY/K 制造商:Renesas Electronics Corporation 功能描述:
NP110N055PUG-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,55V/110A,Tch175